Wide Band Gap Semiconductors

Radio frequency sputtered Al:ZnO-Ag transparent conductor: A plasmonic nanostructure with enhanced optical and electrical properties

Engineering / Plasmonics / Applied Physics / Fractals / Ellipsometry / Mathematical Sciences / Physical sciences / Tuning / Wide Band Gap Semiconductors / Sputter Deposition / Mathematical Sciences / Physical sciences / Tuning / Wide Band Gap Semiconductors / Sputter Deposition

Radio frequency sputtered Al:ZnO-Ag transparent conductor: A plasmonic nanostructure with enhanced optical and electrical properties

Engineering / Plasmonics / Applied Physics / Fractals / Ellipsometry / Mathematical Sciences / Physical sciences / Tuning / Wide Band Gap Semiconductors / Sputter Deposition / Mathematical Sciences / Physical sciences / Tuning / Wide Band Gap Semiconductors / Sputter Deposition

A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors

Driver / Steady state / Wide Band Gap Semiconductors / Electrical And Electronic Engineering / Switches

Radio frequency sputtered Al:ZnO-Ag transparent conductor: A plasmonic nanostructure with enhanced optical and electrical properties

Engineering / Plasmonics / Applied Physics / Fractals / Ellipsometry / Mathematical Sciences / Physical sciences / Tuning / Wide Band Gap Semiconductors / Sputter Deposition / Mathematical Sciences / Physical sciences / Tuning / Wide Band Gap Semiconductors / Sputter Deposition

A new small signal model parameter extraction method applied to GaN devices

Computational Modeling / Equivalent Circuit / High Electron Mobility Transistors / Parameter Extraction / Extraction Method / S-parameters / Wide Band Gap Semiconductors / Equivalent Circuits / Semiconductor device modeling / Application Software / Parasitic Capacitance / Objective function / S-parameters / Wide Band Gap Semiconductors / Equivalent Circuits / Semiconductor device modeling / Application Software / Parasitic Capacitance / Objective function

A new small signal model parameter extraction method applied to GaN devices

Computational Modeling / Equivalent Circuit / High Electron Mobility Transistors / Parameter Extraction / Extraction Method / S-parameters / Wide Band Gap Semiconductors / Equivalent Circuits / Semiconductor device modeling / Application Software / Parasitic Capacitance / Objective function / S-parameters / Wide Band Gap Semiconductors / Equivalent Circuits / Semiconductor device modeling / Application Software / Parasitic Capacitance / Objective function

High frequency Class E design methodologies

High Frequency / Design Methodology / Design Criteria / Wide Band Gap Semiconductors

Decade bandwidth high-efficiency GaN VHF/UHF power amplifier

Power Generation / Impedance Matching / Efficiency / Power Amplifier / UHF / Wide Band Gap Semiconductors / Gain / Bandwidth / Wide Band Gap Semiconductors / Gain / Bandwidth

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